Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3
- RS Stock No.:
- 710-3263
- Mfr. Part No.:
- SI2325DS-T1-E3
- Manufacturer:
- Vishay
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
SGD8.69
(exc. GST)
SGD9.47
(inc. GST)
Add 90 units to get free delivery
In Stock
- 15 unit(s) ready to ship from another location
- Plus 2,070 unit(s) shipping from 19 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.738 | SGD8.69 |
| 25 - 95 | SGD1.704 | SGD8.52 |
| 100 - 245 | SGD1.672 | SGD8.36 |
| 250 - 1245 | SGD1.642 | SGD8.21 |
| 1250 + | SGD1.348 | SGD6.74 |
*price indicative
- RS Stock No.:
- 710-3263
- Mfr. Part No.:
- SI2325DS-T1-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 530mA | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | Si2325DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Maximum Power Dissipation Pd | 750mW | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 530mA | ||
Maximum Drain Source Voltage Vds 150V | ||
Series Si2325DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Maximum Power Dissipation Pd 750mW | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
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