Vishay Si2301CDS Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 SI2301CDS-T1-GE3
- RS Stock No.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD7.18
(exc. GST)
SGD7.82
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Plus 260 unit(s) shipping from 29 December 2025
- Final 2,680 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 140 | SGD0.359 | SGD7.18 |
| 160 - 740 | SGD0.348 | SGD6.96 |
| 760 - 1480 | SGD0.338 | SGD6.76 |
| 1500 + | SGD0.328 | SGD6.56 |
*price indicative
- RS Stock No.:
- 710-3238
- Mfr. Part No.:
- SI2301CDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | Si2301CDS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 112mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 860mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series Si2301CDS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 112mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 860mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
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