Vishay Type N-Channel MOSFET, 4.3 A, 100 V Enhancement, 3-Pin IPAK (TO-251) IRLU110PBF
- RS Stock No.:
- 708-4884
- Mfr. Part No.:
- IRLU110PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD9.18
(exc. GST)
SGD10.005
(inc. GST)
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- Shipping from 17 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.836 | SGD9.18 |
| 25 - 95 | SGD1.652 | SGD8.26 |
| 100 - 245 | SGD1.504 | SGD7.52 |
| 250 - 495 | SGD1.502 | SGD7.51 |
| 500 + | SGD1.462 | SGD7.31 |
*price indicative
- RS Stock No.:
- 708-4884
- Mfr. Part No.:
- IRLU110PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Through Hole, Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.76Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 6.1nC | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.38 mm | |
| Standards/Approvals | Halogen Free According to IEC 61249-2-21, JEDEC JS709A, RoHS Directive 2002/95/EC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type IPAK (TO-251) | ||
Mount Type Through Hole, Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.76Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 6.1nC | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 150°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.38 mm | ||
Standards/Approvals Halogen Free According to IEC 61249-2-21, JEDEC JS709A, RoHS Directive 2002/95/EC | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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