Vishay IRL Type N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-220 IRL630PBF
- RS Stock No.:
- 708-4875
- Mfr. Part No.:
- IRL630PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD7.70
(exc. GST)
SGD8.40
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- 10 left, ready to ship from another location
- Final 875 unit(s) shipping from 08 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.54 | SGD7.70 |
| 25 - 95 | SGD1.436 | SGD7.18 |
| 100 - 245 | SGD1.296 | SGD6.48 |
| 250 - 495 | SGD1.252 | SGD6.26 |
| 500 + | SGD1.194 | SGD5.97 |
*price indicative
- RS Stock No.:
- 708-4875
- Mfr. Part No.:
- IRL630PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IRL | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Width | 4.7 mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IRL | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Width 4.7 mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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