DiodesZetex N-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23 ZXMN2B14FHTA
- RS Stock No.:
- 708-2636
- Mfr. Part No.:
- ZXMN2B14FHTA
- Manufacturer:
- DiodesZetex
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD9.78
(exc. GST)
SGD10.66
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 20 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.978 | SGD9.78 |
| 20 - 40 | SGD0.947 | SGD9.47 |
| 50 - 90 | SGD0.91 | SGD9.10 |
| 100 - 190 | SGD0.864 | SGD8.64 |
| 200 + | SGD0.813 | SGD8.13 |
*price indicative
- RS Stock No.:
- 708-2636
- Mfr. Part No.:
- ZXMN2B14FHTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Forward Voltage Vf | 690mV | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Forward Voltage Vf 690mV | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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