DiodesZetex ZXMN10A25G Type N-Channel MOSFET, 4 A, 100 V Enhancement, 4-Pin SOT-223 ZXMN10A25GTA
- RS Stock No.:
- 708-2551
- Mfr. Part No.:
- ZXMN10A25GTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD9.79
(exc. GST)
SGD10.67
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Stock information currently inaccessible
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.958 | SGD9.79 |
| 25 - 45 | SGD1.908 | SGD9.54 |
| 50 - 245 | SGD1.842 | SGD9.21 |
| 250 - 495 | SGD1.764 | SGD8.82 |
| 500 + | SGD1.718 | SGD8.59 |
*price indicative
- RS Stock No.:
- 708-2551
- Mfr. Part No.:
- ZXMN10A25GTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | ZXMN10A25G | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.9W | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Width | 3.7 mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series ZXMN10A25G | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.9W | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Width 3.7 mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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