onsemi BSS138L Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 BSS138LT3G
- RS Stock No.:
- 690-0136
- Mfr. Part No.:
- BSS138LT3G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
SGD3.575
(exc. GST)
SGD3.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Supply shortage
- Plus 175 left, shipping from 01 June 2026
- Plus 40,525 left, shipping from 08 June 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.143 | SGD3.58 |
| 50 - 100 | SGD0.14 | SGD3.50 |
| 125 - 225 | SGD0.136 | SGD3.40 |
| 250 - 475 | SGD0.132 | SGD3.30 |
| 500 + | SGD0.128 | SGD3.20 |
*price indicative
- RS Stock No.:
- 690-0136
- Mfr. Part No.:
- BSS138LT3G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS138L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Power Dissipation Pd | 225mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS138L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Power Dissipation Pd 225mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 50V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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