STMicroelectronics Type N-Channel MOSFET, 4.3 A, 800 V Enhancement, 3-Pin TO-220 STP5NK80Z
- RS Stock No.:
- 687-5358
- Mfr. Part No.:
- STP5NK80Z
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
SGD17.39
(exc. GST)
SGD18.955
(inc. GST)
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In Stock
- Plus 40 unit(s) shipping from 23 March 2026
- Plus 70 unit(s) shipping from 30 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD3.478 | SGD17.39 |
| 25 - 95 | SGD3.134 | SGD15.67 |
| 100 - 245 | SGD3.132 | SGD15.66 |
| 250 - 495 | SGD2.79 | SGD13.95 |
| 500 + | SGD2.764 | SGD13.82 |
*price indicative
- RS Stock No.:
- 687-5358
- Mfr. Part No.:
- STP5NK80Z
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32.4nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Height | 9.15mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32.4nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Height 9.15mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
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