N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220 STMicroelectronics STP120NF10
- RS Stock No.:
- 687-5295P
- Mfr. Part No.:
- STP120NF10
- Manufacturer:
- STMicroelectronics
Subtotal (5 tubes of 2 units)**
SGD48.00
(exc. GST)
SGD52.30
(inc. GST)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit |
|---|---|
| 10 - 38 | SGD4.505 |
| 40 - 98 | SGD4.37 |
| 100 - 198 | SGD4.335 |
| 200 + | SGD4.075 |
**price indicative
- RS Stock No.:
- 687-5295P
- Mfr. Part No.:
- STP120NF10
- Manufacturer:
- STMicroelectronics
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | STripFET II | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 10.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 312 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 172 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.15mm | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series STripFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 312 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 172 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.15mm | ||