N-Channel MOSFET, 33 A, 650 V, 3-Pin TO-220 STMicroelectronics STP42N65M5
- RS Stock No.:
- 687-5201
- Mfr. Part No.:
- STP42N65M5
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)**
SGD13.86
(exc. GST)
SGD15.11
(inc. GST)
Temporarily out of stock - back order for despatch 02/04/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit |
---|---|
1 - 2 | SGD13.86 |
3 - 4 | SGD13.33 |
5 + | SGD12.49 |
**price indicative
- RS Stock No.:
- 687-5201
- Mfr. Part No.:
- STP42N65M5
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 33 A | |
Maximum Drain Source Voltage | 650 V | |
Series | MDmesh M5 | |
Package Type | TO-220 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 79 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Minimum Gate Threshold Voltage | 3V | |
Maximum Power Dissipation | 190 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -25 V, +25 V | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 100 nC @ 10 V | |
Length | 10.4mm | |
Width | 4.6mm | |
Minimum Operating Temperature | -55 °C | |
Height | 9.15mm | |
Select all | ||
---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 33 A | ||
Maximum Drain Source Voltage 650 V | ||
Series MDmesh M5 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 79 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 100 nC @ 10 V | ||
Length 10.4mm | ||
Width 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.15mm | ||
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