STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 5.8 A, 900 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 687-5140P
- Mfr. Part No.:
- STB6NK90ZT4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 6 units (supplied on a continuous strip)*
SGD30.66
(exc. GST)
SGD33.42
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- 1,318 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 6 - 8 | SGD5.11 |
| 10 + | SGD4.79 |
*price indicative
- RS Stock No.:
- 687-5140P
- Mfr. Part No.:
- STB6NK90ZT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.8A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Package Type | TO-263 | |
| Series | MDmesh, SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 46.5nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Width | 9.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.8A | ||
Maximum Drain Source Voltage Vds 900V | ||
Package Type TO-263 | ||
Series MDmesh, SuperMESH | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 46.5nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Width 9.35mm | ||
Automotive Standard No | ||