N-Channel MOSFET, 18 A, 500 V, 3-Pin TO-220F onsemi FDPF18N50
- RS Stock No.:
- 671-4884
- Mfr. Part No.:
- FDPF18N50
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 unit)**
SGD4.64
(exc. GST)
SGD5.06
(inc. GST)
78 In stock for delivery within 4 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit |
|---|---|
| 1 - 9 | SGD4.64 |
| 10 - 24 | SGD4.52 |
| 25 + | SGD4.40 |
**price indicative
- RS Stock No.:
- 671-4884
- Mfr. Part No.:
- FDPF18N50
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | UniFET | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 265 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 38.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 10.16mm | |
| Width | 4.7mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 9.19mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 500 V | ||
Series UniFET | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 265 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 38.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 10.16mm | ||
Width 4.7mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Transistor Material Si | ||
Height 9.19mm | ||
Minimum Operating Temperature -55 °C | ||
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