onsemi PowerTrench Dual N-Channel MOSFET, 600 mA, 20 V, 6-Pin SC-89-6 FDY3000NZ
- RS Stock No.:
- 671-0841
- Mfr. Part No.:
- FDY3000NZ
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 20 units)**
SGD7.28
(exc. GST)
SGD7.94
(inc. GST)
Available for back order.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD150.00 (ex GST)
Units | Per unit | Per Pack** |
---|---|---|
20 - 20 | SGD0.364 | SGD7.28 |
40 - 80 | SGD0.311 | SGD6.22 |
100 - 180 | SGD0.285 | SGD5.70 |
200 - 380 | SGD0.281 | SGD5.62 |
400 + | SGD0.26 | SGD5.20 |
**price indicative
- RS Stock No.:
- 671-0841
- Mfr. Part No.:
- FDY3000NZ
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 600 mA | |
Maximum Drain Source Voltage | 20 V | |
Series | PowerTrench | |
Package Type | SOT-523 (SC-89) | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 700 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.6V | |
Maximum Power Dissipation | 625 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -12 V, +12 V | |
Transistor Material | Si | |
Width | 1.2mm | |
Length | 1.6mm | |
Number of Elements per Chip | 2 | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 0.8 nC @ 4.5 V | |
Height | 0.5mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 20 V | ||
Series PowerTrench | ||
Package Type SOT-523 (SC-89) | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 700 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 625 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Width 1.2mm | ||
Length 1.6mm | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.8 nC @ 4.5 V | ||
Height 0.5mm | ||
Minimum Operating Temperature -55 °C | ||
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