DiodesZetex Type N-Channel MOSFET, 60 mA, 200 V Enhancement, 3-Pin SOT-23 ZVN3320FTA
- RS Stock No.:
- 669-7578
- Mfr. Part No.:
- ZVN3320FTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD5.38
(exc. GST)
SGD5.86
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 50 unit(s) ready to ship from another location
- Plus 25,140 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD0.538 | SGD5.38 |
| 100 - 290 | SGD0.524 | SGD5.24 |
| 300 + | SGD0.485 | SGD4.85 |
*price indicative
- RS Stock No.:
- 669-7578
- Mfr. Part No.:
- ZVN3320FTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 330mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 330mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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