N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF
- RS Stock No.:
- 542-9620P
- Mfr. Part No.:
- IRFI530NPBF
- Manufacturer:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 542-9620P
- Mfr. Part No.:
- IRFI530NPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 110 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 41 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V | |
| Width | 4.83mm | |
| Length | 10.75mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Height | 9.8mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 110 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 41 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 44 nC @ 10 V | ||
Width 4.83mm | ||
Length 10.75mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
Height 9.8mm | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRFI530N is the 100V single N-channel HEXFET power MOSFET in a TO-220 FullPak (Iso) package. The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications.
Advanced process technology
Isolated package
Fully avalanche rated
Lead free
Isolated package
Fully avalanche rated
Lead free
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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