N-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220 Infineon IRFI530NPBF

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Packaging Options:
RS Stock No.:
542-9620P
Mfr. Part No.:
IRFI530NPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

4.83mm

Length

10.75mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

9.8mm

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRFI530N is the 100V single N-channel HEXFET power MOSFET in a TO-220 FullPak (Iso) package. The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications.

Advanced process technology
Isolated package
Fully avalanche rated
Lead free

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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