Vishay IRFP260 Type N-Channel MOSFET, 46 A, 200 V Enhancement, 3-Pin TO-247 IRFP260PBF
- RS Stock No.:
- 541-0468
- Mfr. Part No.:
- IRFP260PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tube of 25 units)*
SGD92.85
(exc. GST)
SGD101.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 05 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 225 | SGD3.714 | SGD92.85 |
| 250 - 475 | SGD3.666 | SGD91.65 |
| 500 - 975 | SGD3.568 | SGD89.20 |
| 1000 - 1975 | SGD3.378 | SGD84.45 |
| 2000 + | SGD3.018 | SGD75.45 |
*price indicative
- RS Stock No.:
- 541-0468
- Mfr. Part No.:
- IRFP260PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | IRFP260 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 280W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31 mm | |
| Height | 20.7mm | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series IRFP260 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 280W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Operating Temperature 150°C | ||
Width 5.31 mm | ||
Height 20.7mm | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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