P-Channel MOSFET, 74 A, 55 V, 3-Pin TO-220AB Infineon IRF4905PBF

RS Stock No.:: 540-9799P
Mfr. Part No.:: IRF4905PBF
Manufacturer:: Infineon

P-Channel MOSFET, 74 A, 55 V, 3-Pin TO-220AB Infineon IRF4905PBF

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Subtotal (10 tubes of 1 unit)**

SGD26.40

(exc. GST)

SGD28.80

(inc. GST)

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Units	Per unit
10 - 49	SGD2.59
50 - 99	SGD2.52
100 - 249	SGD2.45
250 +	SGD2.38

**price indicative

RS Stock No.:: 540-9799P
Mfr. Part No.:: IRF4905PBF
Manufacturer:: Infineon

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF

This MOSFET provides a versatile solution for power management across various industrial applications. It is designed for high efficiency and reliability, making it essential for professionals in the electronics and electrical sectors. With robust performance characteristics, this product enhances circuit design and ensures optimal operation in challenging environments.

Features & Benefits

• High continuous drain current capability of 74A supports demanding applications
• Maximum drain-source voltage of 55V enables effective power management
• Low on-resistance of 20mΩ improves energy efficiency
• Designed as an enhancement mode MOSFET for precise control
• Utilises a TO-220AB package for easy mounting and integration

Applications

• Used in DC-DC converters for efficient power conversion
• Ideal for motor control requiring substantial current management
• Employed in power supplies for streamlined operation
• Suitable for thermal management in high-load environments
• Used in automation systems for dependable switching

How does the low on-resistance benefit circuit design?

The reduced on-resistance minimises power losses during operation, enhancing overall energy efficiency and performance, which is vital in high-current applications.

What is the significance of using a TO-220AB package?

The TO-220AB package allows for efficient heat dissipation while providing ease of installation, making it a preferred choice in industrial applications.

Can this component handle high-temperature environments?

Yes, it operates effectively at temperatures up to +175°C, suitable for rigorous applications.

What kind of applications require this MOSFET's high continuous drain current?

The high continuous drain current is suited for applications such as motor drives, power converters, and other systems that necessitate robust power handling.

How does the gate-threshold voltage impact its performance?

A gate threshold voltage ranging from 2V to 4V ensures reliable switching behaviour, contributing to precise control in various electronic circuits.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Manufacturer	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	74 A
	Maximum Drain Source Voltage	55 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.69mm
	Typical Gate Charge @ Vgs	180 nC @ 10 V
	Length	10.54mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Height	8.77mm
	Forward Diode Voltage	1.6V
	Minimum Operating Temperature	-55 °C

	Select all
	Manufacturer Infineon
	Channel Type P
	Maximum Continuous Drain Current 74 A
	Maximum Drain Source Voltage 55 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.69mm
	Typical Gate Charge @ Vgs 180 nC @ 10 V
	Length 10.54mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Height 8.77mm
	Forward Diode Voltage 1.6V
	Minimum Operating Temperature -55 °C