STMicroelectronics Type N-Channel MOSFET, 7.2 A, 500 V Enhancement, 3-Pin TO-220 STP9NK50Z
- RS Stock No.:
- 485-7923
- Mfr. Part No.:
- STP9NK50Z
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD15.38
(exc. GST)
SGD16.765
(inc. GST)
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In Stock
- 45 unit(s) ready to ship from another location
- Plus 3,625 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD3.076 | SGD15.38 |
| 25 - 95 | SGD2.496 | SGD12.48 |
| 100 - 245 | SGD2.034 | SGD10.17 |
| 250 - 495 | SGD1.992 | SGD9.96 |
| 500 + | SGD1.75 | SGD8.75 |
*price indicative
- RS Stock No.:
- 485-7923
- Mfr. Part No.:
- STP9NK50Z
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.4mm | |
| Height | 9.15mm | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 10.4mm | ||
Height 9.15mm | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Automotive Standard No | ||
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Related links
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