onsemi Isolated 2 Type P, Type N-Channel MOSFET, 680 mA, 25 V Enhancement, 6-Pin SOT-23 FDC6321C
- RS Stock No.:
- 354-4985
- Mfr. Part No.:
- FDC6321C
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 unit)*
SGD1.10
(exc. GST)
SGD1.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 649 unit(s) shipping from 01 June 2026
- Plus 4,902 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 2 | SGD1.10 |
| 3 - 4 | SGD1.06 |
| 5 + | SGD1.00 |
*price indicative
- RS Stock No.:
- 354-4985
- Mfr. Part No.:
- FDC6321C
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 680mA | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.1nC | |
| Forward Voltage Vf | 0.89V | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 900mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 680mA | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.1nC | ||
Forward Voltage Vf 0.89V | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 900mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi Isolated 2 Type P 680 mA 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23
- onsemi Isolated 2 Type N-Channel Power MOSFET 25 V Enhancement, 6-Pin SOT-23 FDC6303N
- onsemi Isolated 2 Type P 510 mA 6-Pin SOT-23
- onsemi Isolated 2 Type P 510 mA 6-Pin SOT-23 NDC7001C
- onsemi Isolated 2 Type N-Channel MOSFET 25 V Enhancement, 6-Pin SOT-363
- onsemi Isolated 2 Type N-Channel MOSFET 25 V Enhancement, 6-Pin SOT-363 FDG6303N
- onsemi Isolated 2 Type N Type P 700 mA 6-Pin SOT-363 FDG6332C