STMicroelectronics STP80N N-Channel MOSFET, 5 A, 800 V Enhancement, 3-Pin TO-220 STP80N1K1K6
- RS Stock No.:
- 287-7046
- Mfr. Part No.:
- STP80N1K1K6
- Manufacturer:
- STMicroelectronics
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SGD108.50
(exc. GST)
SGD118.50
(inc. GST)
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In Stock
- 250 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | SGD2.17 | SGD108.50 |
| 100 - 100 | SGD1.953 | SGD97.65 |
| 150 + | SGD1.758 | SGD87.90 |
*price indicative
- RS Stock No.:
- 287-7046
- Mfr. Part No.:
- STP80N1K1K6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | STP80N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series STP80N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM
Ultra low gate charge
100 percent avalanche tested
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