Vishay SISS Type P-Channel MOSFET, 59.2 A, 40 V Enhancement, 8-Pin 1212-8S SISS4409DN-T1-GE3

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Subtotal (1 pack of 5 units)*

SGD10.25

(exc. GST)

SGD11.15

(inc. GST)

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Per Pack*
5 - 45SGD2.05SGD10.25
50 - 95SGD1.538SGD7.69
100 - 245SGD1.368SGD6.84
250 - 995SGD1.342SGD6.71
1000 +SGD1.314SGD6.57

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Packaging Options:
RS Stock No.:
279-9988
Mfr. Part No.:
SISS4409DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

59.2A

Maximum Drain Source Voltage Vds

40V

Series

SISS

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.009Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

126nC

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

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