Vishay SIJ Type N-Channel MOSFET, 59 A, 100 V Enhancement, 7-Pin SO-8L SIJ4106DP-T1-GE3

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Subtotal (1 pack of 4 units)*

SGD11.452

(exc. GST)

SGD12.484

(inc. GST)

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Units
Per unit
Per Pack*
4 - 56SGD2.863SGD11.45
60 - 96SGD2.148SGD8.59
100 - 236SGD1.913SGD7.65
240 - 996SGD1.875SGD7.50
1000 +SGD1.84SGD7.36

*price indicative

Packaging Options:
RS Stock No.:
279-9931
Mfr. Part No.:
SIJ4106DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8L

Series

SIJ

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.0083Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

69.4W

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.13mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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