Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- RS Stock No.:
- 279-9927
- Mfr. Part No.:
- SIHP155N60EF-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
SGD12.01
(exc. GST)
SGD13.09
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 996 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD6.005 | SGD12.01 |
| 10 - 28 | SGD5.875 | SGD11.75 |
| 30 - 98 | SGD5.75 | SGD11.50 |
| 100 + | SGD5.65 | SGD11.30 |
*price indicative
- RS Stock No.:
- 279-9927
- Mfr. Part No.:
- SIHP155N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.157Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.157Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 600V Drain Source Voltage, 21A Continuous Drain Current - SIHP155N60EF-GE3
This MOSFET is a high-voltage, N-channel transistor designed for power switching in industrial and electronic control environments. It operates as an enhancement-mode device in a through-hole TO-220 package, providing robust power handling for applications requiring substantial drain-source voltage and thermal endurance.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching capability
• 21 A continuous drain current supports elevated load currents
• 0.157 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows sustained power handling
• 38 nC typical gate charge permits predictable switching behaviour
• -55 °C to 150 °C operating range suits harsh-temperature conditions
• 21 A continuous drain current supports elevated load currents
• 0.157 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows sustained power handling
• 38 nC typical gate charge permits predictable switching behaviour
• -55 °C to 150 °C operating range suits harsh-temperature conditions
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for motor drive circuits in industrial automation
• Used for switch-mode power electronics in lighting control
• Can be used for inverter stages in industrial equipment
• Used with thermal management systems in power assemblies
• Ideal for motor drive circuits in industrial automation
• Used for switch-mode power electronics in lighting control
• Can be used for inverter stages in industrial equipment
• Used with thermal management systems in power assemblies
What gate drive considerations are required for reliable switching?
The gate tolerance is ±30V maximum, so gate drivers should respect this limit and provide sufficient drive current to charge the 38 nC typical gate charge for controlled switching speeds.
How should thermal management be arranged for continuous operation?
With 179W maximum power dissipation and TO-220 mounting, secure the device to an appropriate heatsink and ensure adequate airflow to maintain junction temperatures within the -55 °C to 150 °C operating range.
What electrical limits must be observed during design?
The transistor must not be subjected to drain-source voltages above 600V or continuous drain currents above 21 A to avoid exceeding device ratings.
Which package and mounting style does the device use for PCB or chassis integration?
It is supplied in a through-hole TO-220AB package with three pins, allowing secure chassis mounting and straightforward replacement in legacy designs.
Related links
- Vishay SIHP Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3