Vishay SIHK Type N-Channel MOSFET, 19 A, 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- RS Stock No.:
- 279-9919
- Mfr. Part No.:
- SIHK155N60E-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 2000 units)*
SGD8,700.00
(exc. GST)
SGD9,480.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | SGD4.35 | SGD8,700.00 |
*price indicative
- RS Stock No.:
- 279-9919
- Mfr. Part No.:
- SIHK155N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 9.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 9.9mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
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