Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

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Subtotal (1 pack of 4 units)*

SGD14.18

(exc. GST)

SGD15.456

(inc. GST)

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  • 4,980 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
4 - 56SGD3.545SGD14.18
60 - 96SGD3.33SGD13.32
100 - 236SGD2.963SGD11.85
240 - 996SGD2.908SGD11.63
1000 +SGD2.85SGD11.40

*price indicative

Packaging Options:
RS Stock No.:
279-9895
Mfr. Part No.:
SI4190BDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SI

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.093Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

8.4W

Typical Gate Charge Qg @ Vgs

95nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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