STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- RS Stock No.:
- 275-1355
- Mfr. Part No.:
- STP80N600K6
- Manufacturer:
- STMicroelectronics
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SGD109.10
(exc. GST)
SGD118.90
(inc. GST)
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD2.182 | SGD109.10 |
| 150 - 200 | SGD2.101 | SGD105.05 |
| 250 + | SGD1.97 | SGD98.50 |
*price indicative
- RS Stock No.:
- 275-1355
- Mfr. Part No.:
- STP80N600K6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | STP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 86W | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.9mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series STP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 86W | ||
Maximum Operating Temperature 150°C | ||
Length 28.9mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
Zener protected
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