Infineon HEXFET Type N-Channel MOSFET, 173 A, 60 V Enhancement, 3-Pin TO-263

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Subtotal (1 pack of 5 units)*

SGD14.58

(exc. GST)

SGD15.89

(inc. GST)

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Units
Per unit
Per Pack*
5 - 20SGD2.916SGD14.58
25 - 45SGD2.436SGD12.18
50 - 95SGD2.248SGD11.24
100 - 245SGD2.086SGD10.43
250 +SGD2.04SGD10.20

*price indicative

RS Stock No.:
273-3030
Mfr. Part No.:
IRFS7537TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

173A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.30mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

142nC

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

The Infineon single N-channel HEXFET power MOSFET in a D2-Pak package is optimized for broadest availability from distribution partners.

Product qualification according to JEDEC standard

Softer body diode compared to previous silicon generation

Industry standard surface-mount power package

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