Infineon OptiMOSTM Type N-Channel Power MOSFET, 100 A, 30 V Enhancement, 8-Pin PG-TDSON-8 ISC011N03L5SATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 5000 units)*

SGD4,655.00

(exc. GST)

SGD5,075.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Reel*
5000 - 10000SGD0.931SGD4,655.00
15000 - 20000SGD0.896SGD4,480.00
25000 +SGD0.84SGD4,200.00

*price indicative

RS Stock No.:
273-2813
Mfr. Part No.:
ISC011N03L5SATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOSTM

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

96W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

72nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, IEC61249-2-21, RoHS

Automotive Standard

No

The Infineon MOSFET is a N channel MOSFET and optimized for high performance buck converter. This MOSFET is qualified according to JEDEC standard and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Very low on resistance

Superior thermal resistance

Related links