Vishay SQS Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- RS Stock No.:
- 268-8373
- Mfr. Part No.:
- SQS460CENW-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD10.42
(exc. GST)
SGD11.36
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 2,840 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.042 | SGD10.42 |
| 50 - 90 | SGD1.011 | SGD10.11 |
| 100 - 240 | SGD0.95 | SGD9.50 |
| 250 - 990 | SGD0.865 | SGD8.65 |
| 1000 + | SGD0.762 | SGD7.62 |
*price indicative
- RS Stock No.:
- 268-8373
- Mfr. Part No.:
- SQS460CENW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQS | |
| Package Type | PowerPAK 1212-8W | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.059Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.845V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 27W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQS | ||
Package Type PowerPAK 1212-8W | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.059Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.845V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 27W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive dual N channel TrenchFET power MOSFET is lead Pb and halogen free device. That is single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
Related links
- Vishay SQS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA82CENW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8SLW SQS120ELNW-T1_GE3
- Vishay Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W
- Vishay Type P-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS405CENW-T1_GE3
- Vishay SQS Type P-Channel MOSFET 80 V Enhancement, 8-Pin 1212-8SLW SQS181ELNW-T1_GE3
- Vishay SQS484CENW Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212