Vishay SQS N-Channel MOSFET, 214 A, 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3
- RS Stock No.:
- 268-8369
- Mfr. Part No.:
- SQS140ELNW-T1_GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
SGD2,322.00
(exc. GST)
SGD2,532.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 3,000 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 6000 | SGD0.774 | SGD2,322.00 |
| 9000 - 12000 | SGD0.745 | SGD2,235.00 |
| 15000 + | SGD0.699 | SGD2,097.00 |
*price indicative
- RS Stock No.:
- 268-8369
- Mfr. Part No.:
- SQS140ELNW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 214A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SQS | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0043Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Power Dissipation Pd | 197W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 214A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SQS | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0043Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Power Dissipation Pd 197W | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature. It has wettable flank terminals.
Low thermal resistance
AEC Q101 qualified
ROHS compliant
Related links
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