Vishay SQ4850CEY Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin SO-8 SQ4850CEY-T1_GE3
- RS Stock No.:
- 268-8359
- Mfr. Part No.:
- SQ4850CEY-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD12.90
(exc. GST)
SGD14.10
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,480 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.29 | SGD12.90 |
| 50 - 90 | SGD1.265 | SGD12.65 |
| 100 - 240 | SGD1.007 | SGD10.07 |
| 250 - 990 | SGD0.986 | SGD9.86 |
| 1000 + | SGD0.657 | SGD6.57 |
*price indicative
- RS Stock No.:
- 268-8359
- Mfr. Part No.:
- SQ4850CEY-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ4850CEY | |
| Package Type | SO-8 | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.031Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 6.8W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ4850CEY | ||
Package Type SO-8 | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.031Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 6.8W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
Related links
- Vishay SQ4850CEY Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4850CEY-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC SQ4850EY-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- Vishay SQS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS414CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS660CENW-T1_GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_GE3
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS966ENW-T1_GE3