Vishay SIHB N-Channel MOSFET, 35 A, 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
- RS Stock No.:
- 268-8289
- Mfr. Part No.:
- SIHB080N60E-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 268-8289
- Mfr. Part No.:
- SIHB080N60E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 227W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 227W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Related links
- Vishay SIHB N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SIHB080N60E-GE3
- Vishay SIHB N-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- Vishay SIHB N-Channel MOSFET 850 V Enhancement, 3-Pin TO-263 SIHB6N80AE-GE3
- Infineon IPP60R N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R060C7XKSA1
- Infineon CoolMOS C7 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 IPW60R060C7XKSA1
- Vishay E N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3
- Vishay SIHP N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- Vishay EF N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263 SiHB186N60EF-GE3