P-Channel MOSFET, 100 V SOT-23 Microchip VP2110K1-G
- RS Stock No.:
- 264-8951P
- Mfr. Part No.:
- VP2110K1-G
- Manufacturer:
- Microchip
2930 In stock for delivery within 4 working days
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
SGD1.109
(exc. GST)
SGD1.209
(inc. GST)
| Units | Per unit |
| 50 - 90 | SGD1.109 |
| 100 - 240 | SGD0.594 |
| 250 - 990 | SGD0.582 |
| 1000 + | SGD0.571 |
- RS Stock No.:
- 264-8951P
- Mfr. Part No.:
- VP2110K1-G
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
Product Details
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Drain Source Voltage | 100 V |
| Package Type | SOT-23 |
| Mounting Type | Through Hole |