N-Channel MOSFET, 240 V SOT-89 Microchip TN2524N8-G
- RS Stock No.:
- 264-8919
- Mfr. Part No.:
- TN2524N8-G
- Manufacturer:
- Microchip
1395 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 5)
SGD2.09
(exc. GST)
SGD2.28
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 45 | SGD2.09 | SGD10.45 |
| 50 - 95 | SGD1.748 | SGD8.74 |
| 100 - 245 | SGD1.564 | SGD7.82 |
| 250 - 995 | SGD1.534 | SGD7.67 |
| 1000 + | SGD1.502 | SGD7.51 |
| *price indicative | ||
- RS Stock No.:
- 264-8919
- Mfr. Part No.:
- TN2524N8-G
- Manufacturer:
- Microchip
Technical data sheets
Legislation and Compliance
Product Details
The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Drain Source Voltage | 240 V |
| Package Type | SOT-89 |
| Mounting Type | Through Hole |