ROHM RQ6E030AT Type P-Channel MOSFET, -3 A, 30 V Enhancement, 6-Pin SOT-457
- RS Stock No.:
- 264-3830
- Mfr. Part No.:
- RQ6E030ATTCR
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
SGD726.00
(exc. GST)
SGD792.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 10 November 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD0.242 | SGD726.00 |
| 6000 - 6000 | SGD0.225 | SGD675.00 |
| 9000 - 21000 | SGD0.21 | SGD630.00 |
| 24000 + | SGD0.199 | SGD597.00 |
*price indicative
- RS Stock No.:
- 264-3830
- Mfr. Part No.:
- RQ6E030ATTCR
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | RQ6E030AT | |
| Package Type | SOT-457 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 91mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Pb-free lead plating | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series RQ6E030AT | ||
Package Type SOT-457 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 91mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Pb-free lead plating | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The ROHM middle power MOSFET is small surface mount package MOSFET, it is small surface mount package, Pb-free lead plating and RoHS compliant.
Low on-resistance
Related links
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