Renesas Electronics ISL6144 N-Channel MOSFET, 8 A, 12 V Enhancement, 20-Pin QFN ISL6144IRZA
- RS Stock No.:
- 263-0247
- Mfr. Part No.:
- ISL6144IRZA
- Manufacturer:
- Renesas Electronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 263-0247
- Mfr. Part No.:
- ISL6144IRZA
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | QFN | |
| Series | ISL6144 | |
| Mount Type | Surface | |
| Pin Count | 20 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 20mV | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 105°C | |
| Standards/Approvals | No | |
| Width | 900μm | |
| Length | 5mm | |
| Height | 6.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type QFN | ||
Series ISL6144 | ||
Mount Type Surface | ||
Pin Count 20 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 20mV | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 105°C | ||
Standards/Approvals No | ||
Width 900μm | ||
Length 5mm | ||
Height 6.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Renesas Electronics MOSFETs controller provides a suitably sized n-channel power MOSFET which increases power distribution efficiency and availability when replacing a power ORing diode in high current applications. It also consist of a reverse current fault isolation.
Open drain, active low fault output
Internal charge pump
Related links
- Renesas Electronics ISL6144 N-Channel MOSFET 12 V Enhancement, 20-Pin QFN ISL6144IRZA
- Infineon IGOT65 N-Channel MOSFET 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R035D2AUMA1
- Infineon IGOT65 N-Channel MOSFET 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1
- Infineon IGOT65 N-Channel MOSFET 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R055D2AUMA1
- Infineon IGOT65 N-Channel MOSFET 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R025D2AUMA1
- ROHM N-Channel BST N-Channel Power Module 1.2 kV Enhancement, 20-Pin Corrugated Cardboard BST47T1P4K01-VC
- ROHM N-Channel BST N-Channel Power Module 750 V Enhancement, 20-Pin Corrugated Cardboard BST91T1P4K01-VC
- ROHM Quad BST N-Channel Power Module 750 V Enhancement, 20-Pin Corrugated Cardboard BST91B1P4K01-VC
