Infineon HEXFET Type N-Channel MOSFET, 1.9 A, 150 V Enhancement, 8-Pin SO-8 IRF7465TRPBF

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Subtotal (1 pack of 25 units)*

SGD18.375

(exc. GST)

SGD20.025

(inc. GST)

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  • 3,975 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
25 - 25SGD0.735SGD18.38
50 - 75SGD0.721SGD18.03
100 - 475SGD0.662SGD16.55
500 - 1975SGD0.602SGD15.05
2000 +SGD0.59SGD14.75

*price indicative

Packaging Options:
RS Stock No.:
262-6736
Distrelec Article No.:
304-41-668
Mfr. Part No.:
IRF7465TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5mm

Height

1.75mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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