Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 unit)*

SGD8.12

(exc. GST)

SGD8.85

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,800 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9SGD8.12
10 - 99SGD7.71
100 - 249SGD7.32
250 - 499SGD6.95
500 +SGD6.60

*price indicative

Packaging Options:
RS Stock No.:
259-2738
Mfr. Part No.:
IPTG054N15NM5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

143A

Maximum Drain Source Voltage Vds

150V

Package Type

HSOG

Series

IPT

Pin Count

8

Maximum Drain Source Resistance Rds

55.4mΩ

Forward Voltage Vf

0.83V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

58nC

Maximum Power Dissipation Pd

250W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Width

8.75 mm

Height

2.4mm

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.

N-channel, normal level

Very low on-resistance RDS(on)

Superior thermal resistance

100% avalanche tested

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Related links