Infineon IPD Type P-Channel MOSFET, 61 A N HDSOP
- RS Stock No.:
- 258-3872
- Mfr. Part No.:
- IPDD60R045CFD7XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1700 units)*
SGD11,140.10
(exc. GST)
SGD12,143.10
(inc. GST)
Add 1700 units to get free delivery
Temporarily out of stock
- Shipping from 20 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1700 - 1700 | SGD6.553 | SGD11,140.10 |
| 3400 - 3400 | SGD5.898 | SGD10,026.60 |
| 5100 + | SGD5.308 | SGD9,023.60 |
*price indicative
- RS Stock No.:
- 258-3872
- Mfr. Part No.:
- IPDD60R045CFD7XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Series | IPD | |
| Package Type | HDSOP | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Series IPD | ||
Package Type HDSOP | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon high voltage super junction MOSFET technology with integrated fast body diode, completing the CoolMOS 7 series. CoolMOS CFD7 comes with reduced gate charge, improved turn-off behaviour and a reverse recovery charge of up to 69% lower compared to the competition, as well as the lowest reverse recovery time in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge
Improved reverse diode dv/dt and dif/dt ruggedness
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Related links
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