Infineon HEXFET Type N-Channel MOSFET, 6.5 A, 30 V SO-8 IRF7313TRPBF
- RS Stock No.:
- 257-9301
- Mfr. Part No.:
- IRF7313TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD9.02
(exc. GST)
SGD9.83
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,280 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD0.902 | SGD9.02 |
| 50 - 90 | SGD0.875 | SGD8.75 |
| 100 - 490 | SGD0.84 | SGD8.40 |
| 500 - 1990 | SGD0.798 | SGD7.98 |
| 2000 + | SGD0.75 | SGD7.50 |
*price indicative
- RS Stock No.:
- 257-9301
- Mfr. Part No.:
- IRF7313TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 46mΩ | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.78V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 46mΩ | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.78V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 30V dual n channel HEXFET power mosfet in a SO 8 package.
RoHS compliant
Low RDS(on)
Dynamic dv/dt rating
Fast switching
Dual n channel mosfet
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V SO-8
- Infineon HEXFET Type N-Channel MOSFET -30 V SO-8 IRF9388TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V SO-8
- Infineon HEXFET Type N-Channel MOSFET 100 V SO-8 IRF6644TRPBF
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 6-Pin Micro6
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 6-Pin Micro6 IRLMS2002TRPBF
- Infineon HEXFET Type N-Channel MOSFET -30 V, 8-Pin SO-8