N-Channel MOSFET, 8 A, 60 V TO-220 FULLPAK Vishay IRLIZ14GPBF

The Vishay Semiconductor third generation power mosfets provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

Isolated package
High voltage isolation is 2.5 kVRMS
Sink to lead creepage distance is 4.8 mm
Logic-level gate drive
RDS specified at VGS is 4 V and 5 V
Fast switching
Ease of paralleling

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