Vishay Type N-Channel MOSFET, 141 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS160ELNW-T1_GE3
- RS Stock No.:
- 252-0322
- Mfr. Part No.:
- SQS160ELNW-T1_GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD11.69
(exc. GST)
SGD12.74
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,990 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD1.169 | SGD11.69 |
| 50 - 90 | SGD1.146 | SGD11.46 |
| 100 - 240 | SGD0.912 | SGD9.12 |
| 250 - 990 | SGD0.894 | SGD8.94 |
| 1000 + | SGD0.593 | SGD5.93 |
*price indicative
- RS Stock No.:
- 252-0322
- Mfr. Part No.:
- SQS160ELNW-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 141A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | PowerPAK 1212-8SLW | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 192W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Width | 3.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 141A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type PowerPAK 1212-8SLW | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 192W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Width 3.3 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Wettable flank terminals
Low thermal resistance with 0.75 mm profile
Related links
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8 SQS180ELNW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS141ELNW-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS142ELNW-T1_GE3
- Vishay SQS Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS140ELNW-T1_GE3