Vishay N-Channel MOSFET, 36.2 A, 60 V Depletion, 8-Pin PowerPAK 1212-8 SIS4608LDN-T1-GE3

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SGD13.10

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SGD14.30

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10 - 40SGD1.31SGD13.10-
50 - 90SGD1.179SGD11.79SGD6.55
100 - 240SGD1.061SGD10.61SGD24.90
250 - 990SGD0.955SGD9.55SGD88.75
1000 +SGD0.859SGD8.59SGD451.00

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Packaging Options:
RS Stock No.:
252-0289
Mfr. Part No.:
SIS4608LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

36.2A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

33.7W

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

14.5nC

Maximum Operating Temperature

175°C

Length

3.3mm

Standards/Approvals

No

Width

3.3mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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