ROHM RCJ451N20 Type N-Channel MOSFET, 10.7 A, 200 V Enhancement, 3-Pin TO-263 RCJ451N20TL
- RS Stock No.:
- 249-1134
- Mfr. Part No.:
- RCJ451N20TL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD10.79
(exc. GST)
SGD11.762
(inc. GST)
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In Stock
- 56 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | SGD5.395 | SGD10.79 |
| 50 - 98 | SGD4.855 | SGD9.71 |
| 100 - 248 | SGD4.605 | SGD9.21 |
| 250 - 498 | SGD4.505 | SGD9.01 |
| 500 + | SGD3.98 | SGD7.96 |
*price indicative
- RS Stock No.:
- 249-1134
- Mfr. Part No.:
- RCJ451N20TL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | RCJ451N20 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series RCJ451N20 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 200 V drain-source voltage and 45 A drain current, taping packing type.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
RoHs compliant
100 percent avalanche tested
Drive circuits can be simple
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