onsemi SiC Power Module, 1200 V F1-2PACK

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Bulk discount available

Subtotal (1 tray of 28 units)*

SGD6,330.744

(exc. GST)

SGD6,900.516

(inc. GST)

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In Stock
  • Plus 28 unit(s) shipping from 31 December 2025
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Units
Per unit
Per Tray*
28 - 28SGD226.098SGD6,330.74
56 - 56SGD219.315SGD6,140.82
84 +SGD212.736SGD5,956.61

*price indicative

RS Stock No.:
248-5823
Mfr. Part No.:
NXH010P120MNF1PTG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

SiC Power Module

Maximum Drain Source Voltage Vds

1200V

Package Type

F1-2PACK

Mount Type

Through Hole

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material


The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.

10 mohm/1200 V SiC MOSFET half bridge

Options with pre−applied thermal interface material and without pre−applied TIM

Press−fit pins

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