Vishay EF N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- RS Stock No.:
- 239-5382
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
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SGD194.05
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SGD211.50
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 50 | SGD3.881 | SGD194.05 | - |
| 100 - 450 | SGD3.86 | SGD193.00 | - |
| 500 - 950 | SGD3.752 | SGD187.60 | 3% |
| 1000 - 1950 | SGD3.544 | SGD177.20 | 8% |
| 2000 + | SGD3.15 | SGD157.50 | 18% |
*price indicative
- RS Stock No.:
- 239-5382
- Mfr. Part No.:
- SIHP24N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.195Ω | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.195Ω | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Continuous Drain Current - SIHP24N80AEF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for through-hole power electronics. It is intended for use in environments requiring robust switching at elevated voltages and currents, delivering controlled conduction and fast switching behaviour for industrial and converter applications while operating across a very wide temperature range.
Features and Benefits:
• 800V drain-source rating enables high-voltage switching
• 20A continuous drain current supports heavy load handling
• 0.195Ω low Rds(on) reduces conduction losses
• 208W power dissipation allows high-power operation
• 90nC typical gate charge yields predictable switching dynamics
• 30V gate-source maximum protects gate integrity
• 20A continuous drain current supports heavy load handling
• 0.195Ω low Rds(on) reduces conduction losses
• 208W power dissipation allows high-power operation
• 90nC typical gate charge yields predictable switching dynamics
• 30V gate-source maximum protects gate integrity
Applications
• Suitable for high-voltage DC-DC converter stages
• Ideal for power supply primary switch functions
• Used with motor drive front-end circuits
• Can be used for industrial inverter switching
• Suitable for laboratory high-voltage test rigs
• Ideal for power supply primary switch functions
• Used with motor drive front-end circuits
• Can be used for industrial inverter switching
• Suitable for laboratory high-voltage test rigs
What package and mounting method does it use?
It is supplied in a TO-220AB package and is intended for through-hole mounting to allow straightforward heatsinking and chassis attachment.
What thermal range can it withstand in demanding environments?
The device is specified to operate from -55°C up to 150°C, accommodating wide ambient and elevated junction temperatures.
How does the forward voltage affect switching performance?
The typical forward voltage of 1.2V indicates conduction-threshold behaviour during body-diode conduction and influences loss calculations during reverse-recovery and freewheeling events.
Is this device suitable for automotive-standard designs?
It is not designated to meet automotive standards and should not be assumed compliant with automotive-specific requirements.
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