Toshiba N-Channel MOSFET, 6 A, 60 V, 3-Pin SOT-23 SSM3K341R,LF(T
- RS Stock No.:
- 236-3580
- Mfr. Part No.:
- SSM3K341R,LF(T
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
SGD18.70
(exc. GST)
SGD20.38
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.748 | SGD18.70 |
| 50 - 75 | SGD0.732 | SGD18.30 |
| 100 - 225 | SGD0.663 | SGD16.58 |
| 250 - 975 | SGD0.65 | SGD16.25 |
| 1000 + | SGD0.598 | SGD14.95 |
*price indicative
- RS Stock No.:
- 236-3580
- Mfr. Part No.:
- SSM3K341R,LF(T
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Typical Gate Charge Qg @ Vgs | 9.3nC | |
| Maximum Power Dissipation Pd | 2.4W | |
| Forward Voltage Vf | -0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.9mm | |
| Length | 2.4mm | |
| Height | 800μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Typical Gate Charge Qg @ Vgs 9.3nC | ||
Maximum Power Dissipation Pd 2.4W | ||
Forward Voltage Vf -0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.9mm | ||
Length 2.4mm | ||
Height 800μm | ||
Automotive Standard No | ||
The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.
Storage temperature range −55 to 150 °C
Related links
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- Toshiba N-Channel MOSFET 60 V EnhancementLF(T
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