Name: ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1
Brand: ROHM
SKU: 235-2680
Price: 1.06 SGD
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	ROHM
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.05Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	58W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	15nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	6.4mm
	Width	2.4 mm
	Height	10.4mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand ROHM
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.05Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 58W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 15nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 6.4mm
	Width 2.4 mm
	Height 10.4mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - R6504END3TL1

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

ROHM Type N-Channel MOSFET, 4 A, 650 V Enhancement, 3-Pin TO-252 R6504END3TL1

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