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Silicon N-Channel MOSFET, 39 A, 650 V, 3-Pin PG-TO247 Infineon IMW65R048M1HXKSA1

RS Stock No.:
232-0389
Mfr. Part No.:
IMW65R048M1HXKSA1
Manufacturer:
Infineon
Infineon
View all MOSFETs
180 In stock for delivery within 4 working days
Add to Basket
units

Added

Price Each (In a Tube of 30)

SGD23.901

(exc. GST)

SGD25.574

(inc. GST)

unitsPer unitPer Tube*
30 - 30SGD23.901SGD717.03
60 - 60SGD22.706SGD681.18
90 +SGD21.571SGD647.13
*price indicative
RS Stock No.:
232-0389
Mfr. Part No.:
IMW65R048M1HXKSA1
Manufacturer:
Infineon

Technical data sheets


Legislation and Compliance


Product Details




Specifications

AttributeValue
Channel TypeN
Maximum Continuous Drain Current39 A
Maximum Drain Source Voltage650 V
Package TypePG-TO247
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance0.064 Ω
Channel ModeEnhancement
Maximum Gate Threshold Voltage5.7V
Transistor MaterialSilicon
Number of Elements per Chip1
SeriesCoolSiC
180 In stock for delivery within 4 working days
Add to Basket
units

Added

Price Each (In a Tube of 30)

SGD23.901

(exc. GST)

SGD25.574

(inc. GST)

unitsPer unitPer Tube*
30 - 30SGD23.901SGD717.03
60 - 60SGD22.706SGD681.18
90 +SGD21.571SGD647.13
*price indicative