MOSFET, 60 A, 1200 V, 4-Pin HiP247-4 STMicroelectronics SCTWA60N120G2-4

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.